Research Summaries

Back WMD Radiation Effects on Vertical GaN Materials, Junctions, and Interfaces

Fiscal Year 2017
Division Graduate School of Engineering & Applied Science
Department Electrical & Computer Engineering
Investigator(s) Weatherford, Todd R.
Sponsor Defense Threat Reduction Agency (DoD)
Summary The basic mechanisms of WMD radiation-induced displacement and ionization effects are studied for Gallium Nitride power applications in space environments. Specifically investigations of unique basic structures related to vertical GaN power technologies, such as Schottky contacts, p-n diodes, and MOS structures on nonpolar planes.
Keywords Electronics Gallium Nitride Radiation effects semiconductors
Publications Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal
Data Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal