Research Summaries

Back Far Infrared GAAS Blocked Impurity Band (BIB) Arrays

Fiscal Year 2007
Division Graduate School of Engineering & Applied Science
Department Physics
Investigator(s) Haegel, Nancy M.
Sponsor National Aeronautics & Space Administration - Goddard Space Flight Center (Other-Fed)
Summary Modeling will be performed to study the effects of variation in doping, layer thickness and interface gradient in the GaAs BIB structures. The model is a finite difference calculation that shows the spatial distribution of the electric field, carrier concentrations, space charge and currents in the device. Steady state field distributions will be produced for a range of doping levels and layer thicknesses corresponding to those obtained in the growth of the test structures. The model allows for calculation of the size of the depletion region as a function of important variables such as compensation in the absorbing layer and doping gradations at the interfaces. The modeling will also be used to study the effect of illumination levels and to predict optimum responsivity of the device.
Keywords
Publications Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal
Data Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal