Research Summaries

Back Investigation of High Current Gan Schottky Interfaces

Fiscal Year 2015
Division Graduate School of Engineering & Applied Science
Department Electrical & Computer Engineering
Investigator(s) Weatherford, Todd R.
Sponsor Office of Naval Research (Navy)
Summary To investigate Gallium Nitride (GaN) Schottky contacts which would exhibit high stability under high current densities. A team composed of NPS, UC Berkeley, Sandia, Avogy and NRL will grow, stress, characterize, model and image atomic interfaces to determine material, growth properties favorable for stable GaN Schottky contacts. NPS will specifically electrically characterize, stress, model and provide SEM and some TEM imaging.
Keywords
Publications Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal
Data Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal