Summaries - Office of Research & Innovation
Research Summaries
Back Investigation of High Current Gan Schottky Interfaces
Fiscal Year | 2015 |
Division | Graduate School of Engineering & Applied Science |
Department | Electrical & Computer Engineering |
Investigator(s) | Weatherford, Todd R. |
Sponsor | Office of Naval Research (Navy) |
Summary | To investigate Gallium Nitride (GaN) Schottky contacts which would exhibit high stability under high current densities. A team composed of NPS, UC Berkeley, Sandia, Avogy and NRL will grow, stress, characterize, model and image atomic interfaces to determine material, growth properties favorable for stable GaN Schottky contacts. NPS will specifically electrically characterize, stress, model and provide SEM and some TEM imaging. |
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Publications | Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal |
Data | Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal |