Research Summaries

Back Study of Radiation Influenced Defects in (Al,Ga)N/Si

Fiscal Year 2012
Division Graduate School of Engineering & Applied Science
Department Electrical & Computer Engineering
Investigator(s) Weatherford, Todd R.
Sponsor Defense Threat Reduction Agency (DoD)
Summary The unambiguous identification of radiation-induced defects in AlGaN/GaN heterostructures deposited on silicon and their correlation to changes in the material properties upon WMD radiation will be investigated using various radiation sources including electron, proton and neutron irradiation. The study will identify defects for specific structures as grown and determine which additional defects will be induced by various radiation as well as how the as grown or stress induced defects behave under irradiation. Defect identification focuses on direct imaging as well as local chemical analysis performed in a novel low voltage, low dose TEM analysis in addition to electrical and optical characterization. Irradiation experiments will include changes in E-field, strain and temperature (EST effects) which will more accurately represent actual conditions in a device operating in a harsh environment. Accompanying simulations will support the knowledge transfer between material changes upon irradiation and the performance changes of a corresponding device (FET).
Keywords
Publications Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal
Data Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal