Summaries - Office of Research & Innovation
Research Summaries
Back Gallium Nitride HEMT Reliability Analysis
Fiscal Year | 2008 |
Division | Graduate School of Engineering & Applied Science |
Department | Electrical & Computer Engineering |
Investigator(s) | Weatherford, Todd R. |
Sponsor | Air Force Research Laboratory (Air Force) |
Summary | This proposal is to investigate end-of-life (EOL) reliability of Gallium nitride (GAN) based high electron mobility transistors (HEMTS) for the AFRL PACE program. The GaN HEMT provides extended bandwidth, efficiency, power density, higher thermal operation and reduced circuit complexity over other semiconductors. Only EOL reliability has limited GaN technology to transition to DoD systems. Deliverables will be electronically transmitted and will include theses, reports and other publications. The work is proposed for FY08. |
Keywords | Reliability Electronics |
Publications | Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal |
Data | Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal |