Summaries - Office of Research & Innovation
Research Summaries
Back WMD Radiation Effects on Vertical GaN Materials, Junctions, and Interfaces
Fiscal Year | 2017 |
Division | Graduate School of Engineering & Applied Science |
Department | Electrical & Computer Engineering |
Investigator(s) | Weatherford, Todd R. |
Sponsor | Defense Threat Reduction Agency (DoD) |
Summary | The basic mechanisms of WMD radiation-induced displacement and ionization effects are studied for Gallium Nitride power applications in space environments. Specifically investigations of unique basic structures related to vertical GaN power technologies, such as Schottky contacts, p-n diodes, and MOS structures on nonpolar planes. |
Keywords | Electronics Gallium Nitride Radiation effects semiconductors |
Publications | Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal |
Data | Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal |