Fiscal Year	2012
Division	Graduate School of Engineering & Applied Science
Department	Electrical & Computer Engineering
Investigator(s)	Weatherford, Todd R.
Sponsor	Defense Threat Reduction Agency (DoD)
Summary	The unambiguous identification of radiation-induced defects in AlGaN/GaN heterostructures deposited on silicon and their correlation to changes in the material properties upon WMD radiation will be investigated using various radiation sources including electron, proton and neutron irradiation. The study will identify defects for specific structures as grown and determine which additional defects will be induced by various radiation as well as how the as grown or stress induced defects behave under irradiation. Defect identification focuses on direct imaging as well as local chemical analysis performed in a novel low voltage, low dose TEM analysis in addition to electrical and optical characterization. Irradiation experiments will include changes in E-field, strain and temperature (EST effects) which will more accurately represent actual conditions in a device operating in a harsh environment. Accompanying simulations will support the knowledge transfer between material changes upon irradiation and the performance changes of a corresponding device (FET).
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