Research Summaries

Back Gallium Nitride HEMT Reliability Analysis

Fiscal Year 2008
Division Graduate School of Engineering & Applied Science
Department Electrical & Computer Engineering
Investigator(s) Weatherford, Todd R.
Sponsor Air Force Research Laboratory (Air Force)
Summary This proposal is to investigate end-of-life (EOL) reliability of Gallium nitride (GAN) based high electron mobility transistors (HEMTS) for the AFRL PACE program. The GaN HEMT provides extended bandwidth, efficiency, power density, higher thermal operation and reduced circuit complexity over other semiconductors. Only EOL reliability has limited GaN technology to transition to DoD systems. Deliverables will be electronically transmitted and will include theses, reports and other publications. The work is proposed for FY08.
Keywords Reliability Electronics
Publications Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal
Data Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal