Fiscal Year	2020
Division	Graduate School of Engineering & Applied Science
Department	Electrical & Computer Engineering
Investigator(s)	Zhang, Di
Sponsor	National Aeronautics & Space Administration (Other-Fed)
Summary	Naval Postgraduate School (NPS) proposes to mature a solid-state circuit breaker consisting of both silicon (Si) and silicon carbide (SiC) semiconductor devices, advanced insulation, control and packaging technologies through phased demonstration. The proposed solid-state circuit breaker includes both Si insulated-gate bipolar transistor (IGBT) and SiC metal oxide semiconductor field effect transistor (MOSFET), which can block 2 kV voltage, break 1kA current and limit the peak fault current to 5kA in as fast as 10μs at the altitude operation condition of 35 kft or higher. This effort will significantly improve upon current Navy 1kV 1kA dc circuit breaker technology to achieve NASA¿s efficiency, power density and altitude capability targets, at TRL6, in a 3-year, 3-phase program, culminating in a full power demonstrator at NASA Electric Aircraft Testbed (NEAT).
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Data	Publications, theses (not shown) and data repositories will be added to the portal record when information is available in FAIRS and brought back to the portal